Production of high quality epitaxial films of group III nitrides and their alloys on a large size Si wafer is requested for high frequency and high power electronics devices. Plasma assisted molecular beam epitaxy (PA-MBE) method, which uses radio frequency inductively coupled plasma (rf-ICP), is the most suitable one for growth of the group III nitrides on a Si wafer. From an original Si wafer a double buffer layer (DBL)  AlN/β-Si₃N₄/Si(111) is grown by interface reaction epitaxy (IRE) of Si and successive IRE of β-Si₃N₄ to form AlN. The rf-ICP plasma produces nitrogen radicals such as chemically active nitrogen atoms (N+N*) and physically active excited nitrogen molecules(N₂*).

A DBL of AlN(0001)/β-Si₃N₄/Si(111) has been studied by Wu et. al [1] and present authors [2-4]. Controlling exposure of both  (N+N*) and N₂* fluxes is able to use an activity modulation migration enhanced epitaxy (AM-MEE)[4, 5]. On the DBL an AlN(0001) template is grown by an AM-MEE method of PA-MBE. This method is able to make a electronic or optical device from Si wafer with in a one MBE chamber.

In this presentation a new one-chamber growth system for group III nitrids on a large size Si wafer using PA-MBE system is demonstrated.  In order to improve quality of the epitaxial films  the interface properties of the AlN template and Si substrate is studied by grazing incidence-angle X-ray reflectivity (GIXR) measurement [6].    

References

[1] C.L.Wu, J.C.Wang, M.H. Chan, T.T. Chen, S.Gwo, Appl. Phys. Lett. 83 (2003) 4530.

[2] N. Yamabe, H. Shimomura, T. Shimamura, and T. Ohachi, J. Cryst. Growth 311, 3049 (2009).

[3] N. Yamabe, Y. Yamamoto, and T. Ohachi, Phys. Status Solidi C 8, 1552 (2011).

[4] T. Ohachi, N. Yamabe, Y. Yamamoto, M. Wada, and O. Ariyada J. Jpn. Appl. Phys. 50, 01AE01(1)-(8) (2011).

[5] T. Ohachi, Y. Yamamoto, O. Ariyada, Y. Sato, S. Yoshikado, and M. Wada, P hys. Status Solidi C 10, No. 3, 429–432 (2013).

[6] Y. Yamamoto, N. Yamabe, and T. Ohachi, J. Cryst. Growth 318, 474 (2011).

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