Nowadays, there is an interest in the growth of Ge nanolayers on different substrates (for example, on Ge, GaAs etc.) with the use of reflection high energy electron diffraction (RHEED) to monitor the preparation of samples. However, the interpretation of experimental runs of RHEED oscillations is still carried out mostly with the help of strongly simplified approaches which may cause some controversies.

In the current work RHEED oscillations and their parameters are computed for off-symmetry azimuths using dynamical diffraction theory. However, two substantially different models of the scattering potential are used. Calculations employing the realistic model are compared with calculations for the simple potential model. The realistic potential is defined with the help of sums of Gaussian functions determined for each atomic layer. On the other hand, in the simple model only two, volume-averaged, constants are taken into account to describe the potential (one value is set for the bulk, the other for the growing layer).

It is discussed that simplified approaches may be indeed helpful for describing basic features of RHEED oscillations. However, obtaining precise information on growing samples requires the use of realistic approaches.

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