Growth and characterization of non-polar InN epitaxial films grown on β-LiGaO2 (100), (010) substrates by halide vapor phase epitaxy (HVPE) is presented here. InCl3 and NH3 are the source materials. InN is a promising material for optoelectronic devices because of its small effective mass, high electron drift velocity and small band gap (0.7eV). However, it is difficult to grow InN material with good quality because of its high dissociation pressure and poor thermal stability. Most of InN epitaxial films are grown on c-plane sapphire substrate, and it will be along the polar wurtzite c-plane orientation [1-3]. However, there are strong spontaneous and piezoelectric polarization-induced electric fields in III-Nitride heterostructures grown along c-axis [4]. It leads to a strong surface electron accumulation, which impedes the development in p-type InN [5]. One of the solutions to solve these problems is to grow InN films in nonpolar directions, such as m-plane (10-10), a-plane (11-20). We propose that LiGaO2 (LGO) single crystal substrate might be a potential substrate for the growth of nonpolar InN material. LiGaO2 has an orthorhombic structure with the lattice parameters of a = 5.402, b = 6.372, c = 5.007Å. X-ray diffraction pattern shows that as-grown InN films on LiGaO2 (100) and (010) are in non-polar m-plane (10-10) (Fig. 1) and a-plane (11-20) (Fig. 2) respectively. For (10-10) InN // (100) LGO, the lattice mismatch is 13.8%, while that for (11-20) InN // (010) LGO is 13.8%. Fig. 3 and Fig. 4 show the top view SEM images of InN films grown on (100) and (010) LGO substrates. To our understanding, (100) and (010) β-LiGaO2 substrates have not been used to the heteroepitaxy growth of non-polar InN growth yet. More details will be presented in the conference.

References

[1] Y. Kumagai et al., J. Cryst. Growth. 300(2007)57.

[2] Y. Sato et al., J. Cryst. Growth. 144(1994)15.

[3] G. Koblmüller et al., Appl. Phys. Lett. 93(2008)171902.

[4] X.L. Zhu et al. J. Cryst. Growth. 310(2008)3726.

[5] Ching-Lien Hsiao et al. J. Applied Physics. 107(2010)073502.

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