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Growth and electronic properties of antiferromagnetic semiconductor LiMnAs

Stepan Svoboda 1,2Vit Novak 1Miroslav Cukr 1Tomas Jungwirth 1Lukas Horak 3Xavier Marti 1Vaclav Holy 3Nada Tesarova 3Petr Nemec 3Ineke Wijnheijmer 4Paul M. Koenraad 4

1. Czech Academy of Sciences, Institute of Physics, Cukrovarnicka 10, Prague 16253, Czech Republic
2. Czech Technical University in Prague, The Faculty of Nuclear Sciences and Physical Engineering, Trojanova 13, Prague 2, Prague 12000, Czech Republic
3. Charles University, Faculty of Mathematics and Physics, Ke Karlovu 3, Prague 12116, Czech Republic
4. Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600MB, Netherlands

Abstract

The first successful MBE growth of the antiferromagnetic material LiMnAs has been reported recently [1], opening one possible route to spintronics based on antiferromagnets. Although the ab-initio calculations predict the material to be a semiconductor, its detailed electronic structure still has not been fully experimentally explored. We present experimental study of the electronic and optical properties of LiMnAs by means of in situ optical reflectometry, cross sectional STM spectrocsopy, Auger spectroscopy and capacitance spectroscopy. Furthermore, we observed and analyzed the growth oscillations in the RHEED image at the early stages of the film growth. Combined with the SEM and XRD structural analysis this allowed us to identify coexistence of two closed phases of the material.

[1] T. Jungwirth, Phys. Rev. B 83, 035321 (2011)

 

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Related papers

Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 2, by Vit Novak
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 13:08
Revised:   2013-04-12 13:08