In-situ observation of faceted growth of benzophenone single crystals from melt

Veerabagu Natarajan 1Mukannan Arivanandhan 2Yuko Inatomi 3Yasuhiro Hayakawa 2

1. Department of Physics, Aditanar College of Arts and Science,, Tiruchendur 628216, India
2. Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-Ku,, Hamamatsu 432-8011, Japan
3. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa, Fujisawa, Kanagawa 229-8510, Japan


Understanding of crystal growth process is important not only for the fundamental science but also for the industrial crystallization. Many factors associated with structure of a crystal such as temperature gradient, cooling rates of a crystal influence in controlling the growth process. Therefore, it is indispensable to understand the primary growth process taking place during crystallization from solution and/or melt. The growth process at an initial stage of growth can be understood by in-situ observation of the growing crystal and the solid-liquid interfaces. In order to understand the growth process of benzophenone in detail, melt growth of benzophenone was in-situ observed under various cooling rate and temperature gradient. Growth rate and the profile of temperature in the vicinity of solid-liquid interface were investigated. The movement of growth interface with time was measured for various growth faces such as (001), (101) and (011) and the growth rates of the respective faces were calculated. It was found that the growth rate of all the faces increased with cooling rate. Steady state growth was observed in the experiments with low temperature gradient while the steep gradient leads to unstable growth of crystal. The observed growth rate variation was explained using the PBC and attachment energy models.


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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 6, by Mukannan Arivanandhan
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-12 04:40
Revised:   2013-04-12 12:55