Analysis of dielectric properties of PbMoO4:Nd and PbWO4:Nd single crystals

Yuriy N. Gorobets ,  Myron B. Kosmyna ,  Boris N. Nazarenko ,  Viacheslav M. Puzikov ,  Alexey N. Shekhovtsov 

Institute for Single Crystals NAS of Ukraine (ISC), 60 Lenin Ave., Kharkov 61001, Ukraine

Abstract

Currently, PbMoO4:Ndand PbWO4:Nd  single crystals are considered to be promising active media for Raman lasers, which combine lasing and conversion functions due to stimulated Raman scattering (SRS). Efficient SRS conversion calls for high pump densities. This circumstance imposes stringent requirements on the radiation resistance of SRS materials. The dependence of the optical breakdown of PbMoO4:Nd and PbWO4:Nd crystals on the neodymium concentration and the doping scheme was studied. It was established, that dielectric relaxation phenomenon in PbMoO4:Nd and PbWO4:Nd crystals depend on neodymium concentration and the doping scheme [1].

The PbWO4:Nd and PbMoO4:Nd single crystals were grown by the Czochralski method by the use of different doping scheme. Dielectric properties have been studied in the temperature range of 20–550°C at frequencies from 25 to 106 Hz. The activation energies of dielectric relaxation processes are determined for all crystals. The frequency dependence of tan δ for the  PbWO4:Nd and PbMoO4:Nd crystals was analyzed in the frame of computer model for the substitution of the insulator under study using the equivalent electric scheme. The parameters of the substitution electric scheme for different temperatures were defined and analyzed. The doping mechanism of PbWO4:Nd3+ and PbMoO4:Nd3+ crystals was discussed too.

1. Yu.N.Gorobets, M.B.Kosmyna, A.P.Luchechko et. al. // Crystallography Reports, 2012, V.57, #7, p.962.

 

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Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 6, by Myron B. Kosmyna
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-03-29 18:08
Revised:   2013-06-06 15:23