Non-ploar ZnO ultra-thin films were grown epitaxially on (10-10) sapphire substrate at 220 ⁰C by flow-modulation atomic layer deposition method. Synchrotron X-ray scattering was employed to analyze the surface roughness, lattice constant, strain states and orientation of ultra-thin films. The results indicated the full-strained ZnO orientation rotate from (100) atomic plane to miscut plane at 7 monolayers and suddenly release at 8 monolayers. Besides, we also simultaneously observed quantum dots formation on 8 monolayers ZnO film surface by atomic force microscopy.

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