A three-dimensional numerical simulation has been performed to understand the motion of the melt flow during the Czochralski silicon single crystal growth process under the influence of a transverse magnetic field.  With the application of a transverse magnetic, the velocity, temperature and oxygen distributions in the melt become three-dimensional and asymmetric.  A stronger spiral vortex motion is formed under the crystal-melt interface.  The temperature is higher at the crucible wall due to the stronger downward flow motion near the crucible center and the weaker flow motion near the sidewall.  This increases the dissolution rate of oxygen from the quartz crucible.  However, the stronger spiral motion can prevent the transfer of oxygen impurities towards the crystal-melt interface.  This may explain why the presence of a transverse magnetic field decreases the incorporation of oxygen.  The effect of crucible rotation on the oxygen concentration and distribution is investigated.  In the transverse magnetic field, the results show that the oxygen concentration decrease with the crucible rotation rate decreased.  For larger size of the silicon crystal, the results also display this tendency.

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1. Numerical Simulation of Oxygen Transport during the Czochralski Silicon Crystal Growth with a Cusp Magnetic Field