CdMnTe is considered as the candidate material for x-ray and gamma ray detector applications. Production of CdMnTe crystal suffers from the low yield because of the severe twinning problem, which is caused by the transformation of the crystal structure of CdMnTe ingot during growth, when cooling to room temperature.

 In this work, twin-free CdMnTe crystal was grown from Te solution with vertical Bridgman method. By adding excess Te, the growth temperature was lowered to 1293 K, 70 K below the melting point of Cd_0.9Mn_0.1Te. The phase transformation was thus avoided. Fewer twins were found in the as-grown CdMnTe crystal, compared with which grown from the traditional Bridgman method. The growth interface was studied. By using the optical microscope, SEM, IR transmission microscope and the confocal laser scanning microscope, the morphology of the growth interface was described macroscopically and microscopically. The possible growth mechanism was discussed. The optical and electrical properties of CdMnTe crystal were also investigated. PL spectrum showed good crystalline quality. High resistivity up to 2×10¹⁰ Ω·cm and good mutau products of electrons up to 1.6×10^-3 cm²•V^-1 was obtained. CMT detector was fabricated with planar electrode. Preliminary result with resolution of 10% for ²⁴¹[email protected] was given. Further improve was expected with the optimization of the growth process and the detector evaluation system.

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1. Comparison of CdTe and ZnTe crystals grown under Te-rich condition
2. Coupling effects of Te inclusions and the surrounding extended defects in bulk-grown CdZnTe crystals