The dissolution behaviour of silicon in a germanium melt has been numerically investigated. The numerical simulations were carried out using an axisymmetry model.

The effect of free surface on mixing was examined. The effect, while slight, did show a tendency of higher mixing with a free surface on the melt. The effect of the direction of gravity was also examined. One set of numerical experiments placed the silicon dissolution interface on top of the melt and the others the bottom of the melt. The chosen orientation with respect to gravity had a significant effect on dissolution. Far more dissolution was realized with the dissolution interface at the bottom of the melt. Silicon transport was aided by its buoyancy in the germanium melt. The melt, in these cases, remained inhomogeneous. This is likely due to very fast dissolution and strong convective flows.

The numerical results indicate that careful consideration of system geometry is needed when silicon is to be dissolved into germanium melt. Silicon dissolution from the surface of the melt will be limited by diffusion time scales. Silicon dissolution from the bottom of the melt will occur much faster but be subject to instability and melt inhomogeneity.

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