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Growth and Characterizations of Cu2ZnSnS4 Thin-Films Synthesized by Successive Ion Layer Adsorption and Reaction

Vipulkumar Kheraj 

S.V. National Institute of Technology (SVNIT), Piplod,Ichchanath, Surat 395007, India

Abstract

Copper Zinc Tin Sulphide i.e. Cu2ZnSnS4 (CZTS) is a p-type quaternary semiconductor compound having high absorption coefficient of the order of 104 cm-1 and a direct band gap of about 1.5 eV. These properties make it one of the promising materials as an absorber layer in thin-film solar cells. Moreover, unlike CuInSe2 (CIS), CuInGa(S,Se)2 (CIGS) and CdTe, the CZTS does not contain any toxic or scarce material which makes it an attractive choice for low cost thin-film solar Photovoltaics. The deposition techniques employed to synthesize thin-film play an important role in determining the overall cost of the solar cells. Therefore, it is important to develop a low cost process for synthesis of the CZTS thin films and to thoroughly understand the effects of the deposition techniques on the properties of the grown thin-films. Here we report deposition of CZTS thin-films on the glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method at the room-temperature. The deposition parameters such as concentration of precursors, time interval for successive layers and reaction time were investigated and optimized for the formation of good quality CZTS thin-films. The effects of deposition parameters on the structural, optical and electrical properties of the CZTS thin-films were studied using X-Ray Diffraction (XRD), Raman Scattering Spectroscopy, UV-Visible Spectroscopy and Four Probe Method. The results of investigation will be discussed in detail at the summer school.

 

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Related papers

Presentation: Poster at 15th Summer School on Crystal Growth - ISSCG-15, by Vipulkumar Kheraj
See On-line Journal of 15th Summer School on Crystal Growth - ISSCG-15

Submitted: 2013-02-21 15:25
Revised:   2013-02-21 15:25