Modeling of the Solid State Amorphization by High Pressure Treatment

Tatiana Ischenko 2S. Demishev 2Boris Straumal 1W. Gust 3

1. Russian Academy of Sciences, Institute of Solid State Physics, Chernogolovka 142432, Russian Federation
2. General Physics Institute, Vavilov Str. 38, Moscow 117942, Russian Federation
3. University of Stuttgart, Institut für Metallkunde, Seestr.75, Stuttgart D-70174, Germany

Abstract


High-pressure technique is the promising method that allows to obtain
new amorphous materials in a bulk form, but physical mechanisms of
this process are not explained fully up to now. Analysis of
experimental data on amorphous semiconductors undergoing
high-pressure treatment shows that the amorphization passes
through the intermediate stressed metastable phase. The system in
this state is far from equilibrium and the amorphization could be
considered as a process of the stress relaxation in disordered
matrix. Following this idea, the simple non-linear model of solid
state amorphization based on the deformation field due to
structural defects of the disordered matrix was proposed. The
dependence of the autowave velocity on the various diffusion
regimes and model parameters was studied. For the experimental
parameters, corresponding to semiconductors undergoing
amorphization by high-pressure treatment, a solution in the form
of a self-sustaining wave is obtained. Dissipative structures that
appear in the vicinity of the wave instability as well as the wave
stability region are analysed in detail. The financial support
from the Alexander von Humboldt Foundation is acknowledged.

 

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  2. Grain Boundary Phase Transitions and Pressure Effect

Presentation: oral at High Pressure School 1999 (3rd), by Tatiana Ischenko
See On-line Journal of High Pressure School 1999 (3rd)

Submitted: 2003-02-16 17:33
Revised:   2009-06-08 12:55