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Materials for semiconductor detectors: CdTe and CdZnTe

Michael Fiederle 1Alex Fauler 2Heiko Braml 2Jens Ludwig 2

1. Materials forschungcentrum (FMF), Stephen Meier str. 21, Freiburg 79104, Germany
2. Univ.Freiburg, Freiburg, Germany

Abstract

The properties of CdTe and CdZnTe favour these materials for the application as radiation detectors. These materials are the subject of scientific and industrial research for more than twenty years. Enormous improvements had been made of the material growth and fabrication of spatial resolving detectors. Nevertheless, there are still several limitations like inhomogeneity of the detector performance and availability of the crystals.
In this talk the state of the art of CdTe and (Cd,Zn)Te detectors will be discussed with the focus on the material parameters, detector performance and the development of spatial resolving detectors. The results of the leading scientific and commercial groups will be presented in comparison to the actual results of the detector development in the Freiburger Materialforschungszentrum. The activities in Freiburg include the growth of detector grade CdTe and CZT crystals, the material characterization and the processing of pixel detector by flip-chip bonding.

 

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Presentation: invited oral at E-MRS Fall Meeting 2004, Symposium D, by Michael Fiederle
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-07-23 16:04
Revised:   2009-06-08 12:55