Sensitivity of a genetic algorithm to the mutation rate parameter value: results for a crystallographic test

Wojciech Paszkowicz 

Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


Genetic algorithms (GAs) represent a family of powerful global-search methods applicable to solving high-complexity optimisation tasks in science, technology and everyday life. The global-optimisation strategies based on the genetic approach mimic the evolution of living organisms. Applications in materials science, physics, chemistry, crystallography, technology, industry, medicine, economy, communication can be found in literature. In crystallography and related fields, the GAs are used e.g. for molecular design, for structure prediction, and for solving structures. Moreover, they constitute an important tool for image analysis, e.g. in medicine, and can be used for analysis of various kinds of data collected at 2D detectors.
Mutation is one of operators employed in GAs. Typically, it consists of flipping a single bit with a small probability (mutation rate, M). Using this operator ascertains that whole parameter space is searched. The value of M is either fixed at the level ~1% - ~5%, or is adjusted during calculations. In the present study, the role of M value for the success and for the calculation speed is studied on a test example of powder-diffraction data of an orthorhombic crystal. The convergence of the algorithm was determined for 20000, 30000, 60000 and 100000 function calls (during ~200-400 generations) on the basis of multiple test calculations. The probability of finding the global optimum is found to be strongly influenced by the M value. When M equals 1.8%, the chance for successful finding the global optimum is 0.2, only (in remaining cases the algorithm converged to some local minimum). The process of reaching the global minimum is fast then (stopping criterion of 20000 calls is sufficient). For the M value being twice as high (3.7), the chance for success increases to 0.8, but at expense of calculation time (stopping criterion of 100000 calls). The study demonstrates how sensitive is the algorithm to the value of the mutation rate.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  2. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  3. New Ca10Li(VO4)7 laser host: growth and properties
  4. Up-conversion and down-conversion processes observed in Er3+, Yb3+ and Mn2+ doped ZnAl2O4 nanoparticles
  5. Synthesis and properties of up-converted NaYF4: Er, Yb nanoparticles for biomedical applications
  6. Structural, morphological and optical properties of ZnAl2O4 nanoparticles co-doped with Er3+and Yb3+ prepared by combustion aerosol synthesis.
  7. Synthesis and properties of NaYF4: Er, Yb, Gd nanoparticles with and without SiO2 coating for biomedical applications.
  8. Designing biosensors based on semiconductor nanoparticles for an early detection of neurodegenerative diseases.
  9. High-pressure diffraction study of structural and elastic properties of zircon-type and scheelite-type RVO4 (R = Nd, Eu)
  10. Elastic properties of dysprosium orthovanadate: An in-situ powder-diffraction study
  11. Thermal expansion of Si3N4 and Ge3N4
  12. ZnO and core/shell ZnO/ZnS nanofibers: Characterization and applications
  13. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  14. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  15. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
  16. Pressure dependence of lattice parameter of Gadolinium Gallium Garnet crystals
  17. Lattice parameters of hard materials in the low-temperature range
  18. Lattice parameters of a wurtzite-type (Zn,Mg)Se crystal as a function of temperature
  19. Rietveld refinement for Li2Si2O5 doped with vanadium
  20. High-pressure diffraction study of α and β Ge3N4
  21. Effect of annealing on the structure and microstructure of Pr doped ZrO2-Y2O3 nanocrystals
  22. ZnO thin films for organic/inorganic heterojunctions
  23. Optimisation of parameters of a dynamic penalty function for a test example of powder pattern indexing
  24. Wide band-gap II-VI semiconductors for optoelectronic applications
  25. Low temperature ZnMnO by ALD
  26. Substrate effect on the ground state of the magnetic order in NSMO/YBCO superlattices
  27. Method of Manganese co-doping of LT ZnO films
  28. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
  29. Structure properties of bulk ZnO crystals
  30. Magnetic anisotropy and structural properties of ferromagnet/MgO/ferromagnet system
  31. Rietveld refinement for polycrystalline indium nitride
  33. Promising high quality short period Fe/Fe-N multilayers deposited by the sputtering
  34. Structural and Magnetic Properties of Cr/Gd Multilayers Deposited on Sapphire and MgO Substrates
  35. X-ray diffraction studies of thermal-expansion with the use of 1D detectors installed at synchrotron beamlines
  36. Rietveld refinement of powder diffraction data collected with a laboratory diffractometer equipped with a linear X-ray detector
  37. Phase relationships in annealed Cu-Al-O layers
  38. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  39. Area detector as a tool to study properties of the magnetic multilayers by the neutron scattering
  40. Influence of hydrogen adsorption on magnetic properties of Fe films and multilayers
  41. Transmission electron microscopy and X-ray diffraction study of α'-Al2 CO crystals
  42. Diamond as X-ray Wavelength Standard for Thermal-Expansion Studies Using Synchrotron Sources
  43. X-Ray Study of Lattice Parameters of GaN in a Broad Temperature Range

Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Wojciech Paszkowicz
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-07-17 15:21
Revised:   2009-06-08 12:55
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine