Doping effects in nanocrystalline tin dioxide
A.M. Gaskov

Department of Chemistry, Moscow State University, Leninskie gory, 119992 Moscow, Russian Federation.
Fax: +7 (095) 939 0998. E-mail: gaskov @inorg.chem.msu.ru

Doped tin dioxide has found many technological applications such as optical electronic devices, catalysts, gas sensors, batteries and electrodes for aluminum production. The influence of doping with various impurities on the composition, microstructure, electrical and functional properties of nanocrystalline SnO2 is discussed. The materials have been prepared in the form of powders, ceramics, and thin films by chemical precipitation from solutions and aerosol pyrolysis of organometallic compounds. The structure of materials was examined by Transmission Electron Microscopy and X-ray Diffraction techniques. The impurities stabilize the microstructure of nanocrystalline tin dioxide. The reducing of average size of SnO2 crystallites in the doped materials can be caused by impurity segregation on the surface of SnO2 crystallites. To analyze the effect of impurities on charge carriers transport in nanocrystalline SnO2 the conductivity of materials was studied in the low-temperature range 77 K < T < 300 K. The impurities change the electrical resistance of SnO2 due to formation of donor or acceptor level in SnO2 band gap. The grain boundaries make also a contribution to the electrical resistance growth due to formation of barriers at the p-CuO/n-SnO2 or p-PdO/n-SnO2 boundaries. The doping effects on the interaction of nanocrystalline SnO2 with a gas phase were investigated by Mössbauer, Auger electron, and X-ray photoelectron spectroscopy and in situ by Raman spectroscopy and XANES coupled with conductivity measurements. It was demonstrated that the impurities are involved in specific chemical interactions with the gas molecules.

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