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Capacitance and surface voltage charge techniques. Surface Photovoltage Spectroscopy. Method and Applications.

Daniela Cavalcoli 

University of Bologna, Department of Physics, Viale Berti Pichat 6/2, Bologna, Italy

Abstract

The investigation of surface space-charge properties (charge depletion, accumulation or inversion etc..), defect states (which have a detrimental effect on doping) and electronic properties of  InN-based quantum wells and heterostructures (electronic transport at interfaces, quantum confinement) are among the main objectives of the RAINBOW Project.

Surface photovoltage spectroscopy (SPS) is a powerful method for obtaining a detailed picture of the electronic structure of surfaces, defects and interfaces [1]. In SPS, changes in band bending (both at the free semiconductor surface and at buried interfaces) are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties (e.g. bandgap and type, minority carrier diffusion length and lifetime) and can be used for a complete construction of surface and interface band diagrams, including the measurement of energy levels in quantum structures. A particular strength is that a comprehensive analysis of surface and bulk defect state distributions and properties is made possible. Measurements using SPS are contactless and non-destructive.

In the present contribution the relevant surface and interface theory, the physical principles of the method and the experimental details will be discussed, together with several applications concerning a wide variety of materials, alloys and low dimensional semiconductor structures.

[1] L Kronik and Y Shapira, Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering, Surf. Interface Anal. 2001; 31: 954–965.

 

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Presentation: Keynote lecture at E-MRS Fall Meeting 2009, Symposium A, by Daniela Cavalcoli
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-07-23 15:30
Revised:   2009-07-23 15:30