Photoconductive Properties of GaAs-AlGaAs Broad Band Quantum Well Infrared Photodetectoers

Yuksel Ergun 

Anadolu University, Iki Eylul Campus, Eskisehir 26470, Turkey

Abstract

In this work includes the design of the material for infrared photodetectors based on GaAs/AlGaAs multiple quantum wells and the investigation of the electrical and optical properties of the main materials for QWIP (Quantum Well Infared Photodetector) which works in 8-12 micrometer atmospheric window. In this scope, 5 (five) different wafers (from Rev-3 to Rev-7) had been grown and both electrical and optical studies have been performed. Under high electric field, Franz-Keldish oscillation were observed in photo conduction experiments; it was seen that the observed and calculated electron-hole transition energies are in good aggrement for voltage values up to 12V. Calculated activation energy values are are in the range of 80 meV to 120 meV (at +- 1.5V); therefore, the dark current values obtained for our measurements are in aggrement with the values for QWIPs in the literature. Finally, in the photo response experiments it was shown that the infrared detection above 7.2 micrometer is possible with these structures. On the other hand, TEM spectroscopy technique had been used to understand sample quality of grown materials by obtaining cross section images.

 

Presentation: Oral at E-MRS Fall Meeting 2009, Symposium D, by Yuksel Ergun
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-07-06 14:52
Revised:   2009-07-06 14:52