Acceptor doping control in MOCVD grown HgCdTe layers.

Paweł Madejczyk 1Adam Piotrowski Krzysztof Kłos Waldemar Gawron Antoni Rogalski 2Jaroslaw Rutkowski 

1. Military University of Technology, Institute of Applied Physics, ul. Kaliskiego 2, Warszawa 00-908, Poland
2. Wojskova Akademia Techniczna, Warsaw 00908, Poland

Abstract

Basic aspects of acceptor doped HgCdTe layers grown by MOCVD are presented. HgCdTe (111) layers were grown on GaAs (100) substrates in 350°C horizontal reactor using IMP deposition method. TDMAAs and AsH3 were alternatively used as a effective p-type doping precursors. Incorporation and activation rates of arsenic were studied. Over a wide range of Hg1-xCdxTe compositions (0.17<x<0.4) arsenic doping control from 5∙1015cm-3 to 5∙1017cm-3 was obtained without post growth anneal. SIMS profiles, Hall and minority carrier lifetime measurement results are presented for chemical and electrical carrier concentrations characterization. Presented device quality p-type layers show Auger-7 process as a dominant lifetime limiting mechanism.

 

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Presentation: Oral at E-MRS Fall Meeting 2009, Symposium D, by Paweł Madejczyk
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-20 17:39
Revised:   2009-06-07 00:48