Acceptor doping control in MOCVD grown HgCdTe layers.
|Paweł Madejczyk 1, Adam Piotrowski , Krzysztof Kłos , Waldemar Gawron , Antoni Rogalski 2, Jaroslaw Rutkowski|
1. Military University of Technology, Institute of Applied Physics, ul. Kaliskiego 2, Warszawa 00-908, Poland
Basic aspects of acceptor doped HgCdTe layers grown by MOCVD are presented. HgCdTe (111) layers were grown on GaAs (100) substrates in 350°C horizontal reactor using IMP deposition method. TDMAAs and AsH3 were alternatively used as a effective p-type doping precursors. Incorporation and activation rates of arsenic were studied. Over a wide range of Hg1-xCdxTe compositions (0.17<x<0.4) arsenic doping control from 5∙1015cm-3 to 5∙1017cm-3 was obtained without post growth anneal. SIMS profiles, Hall and minority carrier lifetime measurement results are presented for chemical and electrical carrier concentrations characterization. Presented device quality p-type layers show Auger-7 process as a dominant lifetime limiting mechanism.
Presentation: Oral at E-MRS Fall Meeting 2009, Symposium D, by Paweł Madejczyk
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-05-20 17:39 Revised: 2009-06-07 00:48