The p-to-n conversion of CdTe single crystals caused by cadmium-saturated annealing atmosphere is investigated by low temperature photoluminescence (PL), electron beam induced current method (EBIC) and galvanomagnetic measurements. Special attention is devoted to the correlation of the possition of p-n junction established by all methods. We show that PL of excitons bound on silver, copper and sodium neutral acceptors in the converted n-type exhibits drastic reduction (about three orders of magnitude) comparing to unconverted p-type or as grown crystal. Simultaneously, we observe that cadmium substitutional acceptors fast diffuse intersticially into remaining p-type, where they recombine with Cd vacancies and accumulate near the p-n junction. This effect has a potential application in the establishment of the position of the p-n junction and by a homogeneity study by PL measurements.

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