Physicochemical approach to chalcogenide passivation processing of III-Vsemiconductor surfaces
|Larisa V. Fomina 2, Serge A. Beznosyuk 1|
1. Altai State University (ASU), Lenin St., 61, Barnaul 656049, Russian Federation
Today II-V semiconductors find application for manufacturing of microwave electronics and optoelectronics devices. Their properties are in many respects defined by interfaces. Some of perspective directions of updating of the interface is chalcogenide passivation of the semiconductor surface. Using of water solutions of chalcogenide compounds at room temperatures allows to carry out passivation processing in soft conditions.
In report the comparative thermodynamic analysis of passivation processing semiconductor surfaces of gallium nitred, gallium phosphide and gallium arsenide is presented. For equilibrium chemical reactions between the semiconductor and water solutions of chalcogenide reagents some equations of electrode potentials are worked out and standard emf-values are calculated. It is shown that a variety of products of chalcogenide processing are always defined by the nature of elements of V group and oxidation degree characteristics of them. In all cases gallium passes into GanXm compounds, where X – sulphur or selenium. Components of V group pass typically into next products, as follows: in case of GaN into molecular nitrogen and ammonia, for GaP into soluble compounds of quinquivalent phosphorus, for gallium arsenide are possible arsenic chalcogenide formation.
Taking into account crystal chemistry characteristics of contacting substances and physical-chemistry properties of products the thermodynamical analysis of chalcogenide passivation allow to conclude that processing of the semiconductor surface promotes perfection of heterostructure of metal-semiconductor interface in comparison with the ordinary one containing oxide films. Being based on results of the carrying out physicochemical analysis of the semiconductor’s surface passivation processes in water solutions of chalcogenide compounds some new regimes of chalcogenide processing are picked up and diode contacts Ni/GaAs, Ni/GaP with the improved characteristics are received.
Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Serge A. Beznosyuk
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-05-11 07:55 Revised: 2009-06-07 00:48
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