Electron transport in nanostructures: the key to high temperature superconductivity

Hans-Peter Roeser 

University of Stuttgart Institute of Space Systems (IRS), Pfaffenwaldring 31, Stuttgart 70569, Germany

Abstract

The electron transport in nanostructured Schottky barrier diodes - used as low noise THz mixers up to 5 THz – is ballistic. Best signal-to-noise performance is achieved when the phase coherent electron movement is characterized by an optimum barrier depletion thickness Ddepl which has the thickness of twice the doping distance Ddepl = 2x. Detailed investigations on different Schottky diodes show a linear relation between (2x)2 and the mobility µ of the device: (2x)2 = h/2e • µ. Since the mobility µ is proportional to (energy)-1 and because of many similarities compared to high temperature superconductors (HTSC) it has been investigated if the doping distance in HTSCs is connected with (kTc)-1. By analysing published data of very well studied HTSCs we found out that P-type as well as N-type HTSCs with single (n = 1) and multilayered superconducting CuO2 layers and even recently discovered iron-arsen based HTSCs show a linear correlation between the doping distance x and the critical transition temperature Tc. It turns out that the correlation equation (2x)2 • n-2/3 • 2Meff • πkTc = h2 can be derived theoretically from the density of states in a one-dimensional quantum wire. This suggests that the superconducting CuO2 plane consists of superconducting quantum wires. The correlation equation has the prospect to calculate the transition temperature for HTSCs for the first time. The paper will describe the electron transport phenomena in nanostructured Schottky diodes in the THz range and the detailed investigation of the different HTSC families.

 

Presentation: Keynote lecture at E-MRS Fall Meeting 2009, Symposium D, by Hans-Peter Roeser
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-10 17:33
Revised:   2009-08-13 17:31