In conjunction with intensive development of 1D nanomaterials, an interest to technological design of composite materials, namely, nanocables representing nanotube with inner rod has been raised. Silicon carbide is well known with its semiconductive property that is why a development of nanocables SiC@BN is very promising for microelectronic and sensor equipment. This effort is to perform a theoretical investigation of different models of nanocable SiC@BN, in particular, geometry and structure of nanorod SiC, dimensional effects, electron structure, and energy of atoms bond, distribution of electron charge as well as influence of chirality of nanotube BN on electroconductive properties of nanocable.

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