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Electronic structure of sputtering deposited undoped and Ga-doped ZnO thin films on a commercial Cz-Si solar cell substrate.

Mercedes Gabás Pilar Diaz Dietmar Leinen Francisco Martín Lourdes Martinez Shanti Bijani Santiago Palanco Jose R. Ramos-Barrado 1

1. Universidad de Malaga (UMA), Campus Teatinos, Malaga E29071, Spain

Abstract

ZnO is a promising material for use in solar cell applications requiring antireflective coatings and transparent conducting materials in front contacts. Its resistivity can be reduced by appropriate doping with different group III elements, which act as donors, without sacrificing optical transmission. These characteristics makes it one of the most promising and cheap transparent conducting oxides (TCOs).The interface between Si and a TCO like ZnO is a critical part of Si-based solar cells, since the conversion efficiency may be profoundly altered by the presence of recombination centres formed at the interface. We have carried out a thorough analysis using photoelectron spectroscopy (PES) and ultraviolet photoelectron spectroscopy (UPS) of the chemistry of the ZnO:Ga/Si interface formed when a TCO film is deposited by RF magnetron sputtering on a wafer Si solar cell.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Jose R. Ramos-Barrado
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 13:28
Revised:   2009-06-07 00:48