The application of linear 288×4 LWIR MCT detectors with time delay and integration (TDI) capability in thermal imaging systems allows to realize standard 576×768 TV format, to increase detectivity and to decrease defect channels. We used MCT heteroepitaxial structures (HS) grown by MBE with wide gap graded layers at the interface and surface of absorber for fabrication 288×4 diode FPA. The formation of n-p junction was carried out by B⁺ implantation into p-type MCT HS MBE in planar technology. The special MCT composition throughout the layer together with developed planar technology gives the possibility to eliminate surface leakage current that leads to diode parameters limited by diffusion current. The typical diode dark current is equal to I_dark = 2-5 nA with maximum differential resistance R_dmax = (5-7)×10⁸ Ohm at cut-off wavelength lambdac = 10,0-10,5 mkm. CMOS silicon read-out integration circuit (ROIC) provides the following function as TDI regime of each tetra diodes channel, bidirectional scanning, linear charge-to-voltage transformation, deselecting of each 1152 diodes and operating by sequential and parallel interface. The ROIC output voltage is over 2.5 V for information charge 2 pC. The dynamic range is 80 dB with nonlinearity 1%. Linear 288×4 LWIR MCT detectors were fabricated by hybridization of FPA and ROIC through the indium bumps at controlled pressures. The detectors parameters (78К, 30⁰, 300К) at maximum sensitivity are the following: the response Sv = (4,0-4,5)×10⁸ ± 9% V/W; the detectivity D* = (1,5-1,9)×10¹¹± 16% cm×Hz^1/2×W^–1.

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