Optical and Electrical Properties of un-doped and Ga-doped MgxZn1-xO Films by Sputtering Method

Takashi Fukushima 1Kenji Yoshino 1Minoru Yoneta 2Tetsuo Ikari 1

1. Miyazaki UnIversity, 1-1 Gakuen KIbanadai, Miyazaki 889-2192, Japan
2. Department of Applied Physics, Okayama University of Science, Okayama 700-0005, Japan

Abstract

Transparent conducting oxide (TCO) materials have been attracted much attention for flat panel displays and photovoltaic devices. ZnO films are especially attractive since materials they promise lower cost than ITO films and higher conductive and transparence than SnO2 based TCO films. Recently, wurtzite-type MgxZn1-xO (MZO) alloys possess attraction because bandgap energy is larger than that of ZnO. However, there are few reports on MZO films grown by sputtering method.
In this work, un-doped and Ga-doped MZO films were grown by conventional DC and RF sputtering on glass substrate at RT ~ 200 C using ZnO/MgO/Ga2O3 ceramic target. Sputtered MZO films were performed at constant target doping concentration of MgO 0 ~ 20 wt% and Ga2O3 0 ~ 5 wt%. The films were investigating using X-ray diffraction (XRD), optical transmittance and Hall measurements.
From the XRD results, it was observed that all films exhibited only single-phase of MZO without changing the wurtzite structure of ZnO, and XRD peaks shifted lower angle than ZnO. Values of FWHM also became large with increasing Mg contents. Grain sizes examined by the XRD data using Scherrers equation were in good agreement with those obtained by SEM. Transmittance spectra were exhibited that the absorption edge shifted higher energy range with increasing Mg contents. Furthermore, the resistivity, carrier concentration and moblility decreased with increasing Mg contents.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Takashi Fukushima
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-29 03:53
Revised:   2009-06-08 12:55