Atomic layer epitaxy (ALE) has received considerable attention as a novel approach to crystal growth in nanotechnology. A central idea in ALE is a self-limiting mechanism that automatically stops the layer growth at a certain atomic layers and therefore allows complete control of the layer thickness with single atomic layer accuracy.
In homoepitaxies, ALE proved a great success. However, many difficulties appeared in some heteroepitaxies where the self-limiting was easily broken. Even the growthof a simple heterosturucture of eaptaxial layer A on epitaxial layer B requres three types of ALEs; ALE for epitaxial layer B on epitaxial layer B (homoepitaxy), ALE for epitaxial layer A on epitaxial layer B (heteroeptaxy), and ALE for epitaxial layer A on epitaxial layer A (homoepitaxy).
We have investigated the self-limiting mechanism in the ALEs of InAs/GaAs and GaP/GaAs heteroeptxies and strained layered superlattices. Superlattices were grown on GaAs(001) and InP(001) by "Pulsed-Jet-Epitaxy" with trimethylgallium, trimethylindium, trisdimethylaminoarsine, and phosphine as source materials. We report that the strain between epitaxial layer and the substrate, an atomic level surface morphology, and an interface electric neutrality had great effects on the self-limiting mechanism in heteroepitaxy.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/1781 must be provided.

1. Optical Characterization of ZnTe Single Crystal grown by Vertical Gradient Freezing Method
2. Growth and optical properties of MBE-ZnSe on high-quality ZnTe substrate
3. Optical and Electrical Properties of un-doped and Ga-doped Mg_xZn_1-xO Films by Sputtering Method