Growth Mechanism of InAs/GaAs and GaP/GaAs Strained Layered Superlattices by Atomic Layer Epitaxy
|Masashi Ozeki 1, Tomohiro Haraguchi , Takeshi Takeuchi , Kouji Maeda , Kenji Yoshino 1|
1. Miyazaki UnIversity, 1-1 Gakuen KIbanadai, Miyazaki 889-2192, Japan
Atomic layer epitaxy (ALE) has received considerable attention as a novel approach to crystal growth in nanotechnology. A central idea in ALE is a self-limiting mechanism that automatically stops the layer growth at a certain atomic layers and therefore allows complete control of the layer thickness with single atomic layer accuracy.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium A, by Masashi Ozeki
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-28 09:10 Revised: 2009-06-08 12:55