Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells
|Karolis Kazlauskas 3, G. Tamulaitis 3, Saulius Jursenas 3, A. Zukauskas 3, M. Springis 1, Yung-Chen Cheng 2, Hsiang-Cheng Wang 2, Chi-Feng Huang 2, C.C. Yang 2|
1. Institute of Solid State Physics, University of Latvia, 8 Kengaraga, Riga LV-1063, Latvia
InGaN is the key compound of the state-of-the-art blue-UV light emitting diodes and laser diodes. InGaN layers have inherent compositional fluctuations resulting in potential fluctuations, which localize carriers/excitons so that their nonradiative recombination is inhibited and light emission efficiency is increased. However, such an inherent disorder obscures the absorption edge of InGaN, which is a fundamental optical property.
Presentation: oral at E-MRS Fall Meeting 2004, Symposium C, by Karolis Kazlauskas
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-27 18:08 Revised: 2009-06-08 12:55
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