Nitridation of InP(100) surfaces studied by synchrotron radiation

Matthieu PETIT 2BACA David 2,3Sebastian ARABASZ 4Luc BIDEUX 2Christine ROBERT-GOUMET 2Nathalia TSUD 1Stenda FABIK 1Kevin PRICE 1Bernard Gruzza 2Vladimir MATOLIN 3

1. Sincrotrone Trieste, Basovizza 34012, Italy
2. LASMEA, UMR 6602 CNRS, Blaise Pascal University, Clermont-Fd II (LASMEA), 24, avenue des Landais, Aubiere 63170, France
3. Charles University, Department of Electronics and Vacuum Physics, V Holesovickach 2, Prague 180 00, Czech Republic
4. Silesian University of Technology, Institute of Physics, Department of Microelectronics, Krzywoustego 2, Gliwice 44-100, Poland


InN is the least studied of III-N materials which are currently the most promising semiconductors for opto- and micro-electronic applications. The devices performance strongly depends on the quality of the interface between layers. Thus a deep understanding of the early stages of nitridation and following nitride growth is required for improvement of devices efficiency. The nitridation process can be used to produce thin passivating layers and insulating films for fabrication of metal-insulator-semiconductor structures (MIS)
We report results on the InP(100) surfaces nitridation. The nitridation process consist of two main steps : firstly the creation of metallic indium droplets by Ar+ ionic bombardment of the InP(100) surface then the consumption of these droplets by the atomic nitrogen flow which entails the formation of one or two nitride monolayers. The nitrogen flow is produced by a glow discharge source (GDS).
This nitridated structures and its evolution under annealing at 450C and 500C have been studied with synchrotron radiation at the Elletra Material Science Beamline in Trieste (Italy). In4d, P2p and N1s core levels have been specially observed as well as the evolution of the valence bands structures at different beam energies (hν = 50 and 190 eV).

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Matthieu PETIT
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-26 10:57
Revised:   2009-06-08 12:55
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