X-ray imaging using 2D semiconductor detectors

Jean-Pierre Ponpon 

CNRS, PHASE Laboratory, Strasbourg, France

Abstract

Semiconductor nuclear radiation detectors are nowadays of current use for high resolution spectrometry in a number of fields, including those involving X-rays measurements. The significant advances achieved during the last ten years in materials properties, detector characteristics, and high quality electronic systems, make now possible to go one step further and to build 2D X-rays imaging systems based on semiconductor detectors. It is the aim of this paper to present the state of the art of X-rays imaging systems based on such devices.
We’ll first focus on the basic principles involved. We’ll try to discuss the main requirements (detector size, spatial resolution, pixels number, dynamics, counting rate, etc.) and limitations (physical and experimental limitations), with respect to the applications envisaged (scientific, medical or industrial imaging). The major properties of the semiconductors of interest for such applications will be briefly summarized.
Then the working principles and main characteristics of existing systems based on various semiconductor materials and devices will be reviewed and compared to those of conventional X-rays imagers.
Finally, possible evolutions will be discussed in terms of new detector materials and new semiconductor devices, taking into account the increasing potential of microelectronics technology.

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Presentation: invited oral at E-MRS Fall Meeting 2004, Symposium D, by Jean-Pierre Ponpon
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-15 09:35
Revised:   2009-06-08 12:55
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