Undoped and Al-doped ZnO (AZO) thin films were epitaxial grown on c-sapphire substrate by pulsed laser deposition. Photoluminescence and electrical properties of the as-deposited, 450 ^oC-air annealed, and 450 ^oC-subsequent hydrogen annealed films were measured. Near band edge (NBE) emission of AZO is far less than that of undoped ZnO. Further, the NBE emission of AZO reduced after 450 ^oC air annealing. However, subsequent hydrogen annealed AZO show more intense NBE emission than the as deposited film. In addition, electrical properties such as carrier concentration and Hall mobility were reversible changed as an oxidizing and a reducing annealing. In this study, temperature dependent photoluminescence properties of AZO as transparent conducting oxide which annealed in oxidizing and reducing atmosphere discussed combining their electrical properties.

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