Optical and electrical properties of oriented SrCu2O2 thin films grown by pulsed laser deposition

Bernard Servet 1René Bisaro 1Guy Garry 1Mircea Modreanu 2Ekaterina Chikoidze 3Guido Huyberechts 4

1. Thales Research and Technology (TRT), Route Départementale 128, Palaiseau 91767, France
2. University College Cork, Tyndall National Institute (TYNDALL), Lee Maltings, Prospect Row, Cork, Ireland
3. University of Versailles CNRS (GEMAC), 1, Place A. Briand, Meudon 92195, France
4. Umicore Group Research and Development, Kasteelstraat 7 B-2250, Olen B-2250, Belgium

Abstract

SrCu2O2 is found to be a promising p-type transparent conductive oxide (TCO). Here, we report on a study of SrCu2O2 thin films grown by pulsed laser deposition (PLD) on crystalline substrates (sapphire, Ge). The stoichiometric phase can be obtained under thermodynamical growth conditions, e.g. deposition temperature of 500°C and oxygen pressure of 10-5 mbar, according to the phase diagram of bulk strontium-copper-oxygen. The lattice constants and texture of the oriented SrCu2O2 films are determined by X-ray diffraction (XRD) using a four-circle diffractometer so as to deduce the contact plane and the orientation of a and b axes (i.e., axes of high conductivity). The film orientation is also determined by Raman scattering and IR absorption measurements according to the theoretical vibrational analysis based on first-principle calculations. Then, the films are post annealed under a controlled oxygen pressure and their electrical properties (conductivity, hole concentration and mobility) are measured and interpreted in terms of anisotropy of conductivity in the crystal structure of SrCu2O2 and of stoichiometry provided by electron probe microanalysis (EPMA).

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Presentation: Poster at E-MRS Fall Meeting 2008, Symposium B, by Mircea Modreanu
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-19 18:53
Revised:   2009-06-07 00:48
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