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Obtaining of luminescent core-shell hetero-nanoparticles SiO2(core)/ZnO(shell) for photonic application

Iuliia V. Iermolaieva 1Yuriy N. Savin Alexander V. Tolmachev 

1. Institute for Single Crystals NAS of Ukraine (ISC), 60 Lenin Ave., Kharkov 61001, Ukraine

Abstract

In last decade, development of essentially new class of the functional optical materials on the basis of the active photonic crystals has the considerable interest. Zinc oxide is well known wide band-gap semiconductor with large exiton binding energy (60 meV) and intensive UV-luminescence (lmax~380 nm) at room temperature. This semiconductor in the low-dimensional state is considered as one of the most promising materials for making active luminescent photonic crystals, light-emitting devices for UV lasers.

Obtaining of ZnO nanocrystals (ZnO NC) in opal-like structures mostly formed by spherical silica particles (SiO2) with nano- and ultramicron sizes by the infiltration methods is described in many papers. However, negative consequence of the precursor's infiltration into voids of the matrix with further thermal treatment is the process of concomitant zinc silicate formation and worsening of the luminescence characteristics. As an alternative, it is possible to prevent such undesirable effects for that layers of ZnO NC can be formed upon silica spheres (i.e. to obtain hetero-nanoparticles) before theirs compacting.

In the present work SiO2(core)/ZnO NC(shell) core-shell hetero-nanoparticles with a silica core (200-300 nm) and a shell of NC ZnO (20-30 nm) have been obtained. NC ZnO the given sizes at a narrow size distribution (< 15 %) have been grown up from non-water solutions by a sol-gel technique in the presence of silica spheres. The size, morphology and phase composition of synthesized SiO2/ZnO hetero-nanoparticles have been examined by means of electron microscopy and X-ray photoelectric spectroscopy methods. Optical and luminescent properties of received SiO2/ZnO hetero-nanoparticles have been investigated. UV-luminescence (λmax ~ 390 nm) in the all experimental samples is prevailing. It is shown that structure of the luminescence band (presence and intensity of the defect band at 500-600 nm) depends on the ZnO NC synthesis method.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium F, by Iuliia V. Iermolaieva
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-19 15:23
Revised:   2009-06-07 00:48