The variational procedure, in the effective-mass and parabolic-band approximations,
is used in order to investigate the effects of hydrostatic pressure and applied
electric and magnetic fields on the exciton states in GaAs/Ga_1−xAl_xAs coupled
double quantum wells. The exciton envelope wave function is obtained through a
variational procedure using a hydrogenic 1s-like wave function and an expansion
in a complete set of trigonometric functions for the electron and hole wave functions.
We take into account intersubband mixing brought about by the Coulomb interaction of
electron-hole pairs in double quantum wells and present a detailed analysis of the
properties of direct and indirect exciton states in these systems.
Calculated results are found in good agreement with available experimental
measurements on the photoluminescence peak position associated with direct and
indirect excitons in GaAs-Ga_1-xAl_xAs double quantum wells under growth direction
applied electric field both for growth direction and in-plane applied magnetic fields.

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1. Binding energy of a hydrogenic impurity in vertical-coupled wurtzite GaN/AlGaN quantum-dots under hydrostatic pressure and external applied electric field
2. Hydrostatic pressure and Γ − X mixing effects on the exciton and impurity related optical properties in GaAs-Ga_1−xAl_xAs quantum wells