P-type Li doped NiO (LNO) and n-type In doped cubic Mg_xZn_1-xO (In:MZO) thin films were grown on TiN buffered Si(100) substrates by pulsed laser deposition. X-ray diffraction characterization revealed a heteroepitaxial relationship of (001)_LNO||(001)_MZO:In||(001)_TiN||(001)_Si. These heterojunctions showed reasonable rectifying current-voltage characteristics. The typical current turn-on voltage at room temperature was about 2.3V. It decreased to 2.1V at 100^oC. Spectral responses of these heterojunctions were measured in the near UV region. Photocurrent as a function of irradiation intensity was evaluated using a He-Cd laser with 325 nm wavelength. Our results have suggested that LNO/ In:MZO heterojunction is a potential candidate for photovoltaic UV detection.

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