The purpose of the work is a study of the electron irradiation influence with the beam middle energy E ~ 10 MeV on the crystal structure, critical temperature T_c and the temperature dependence of the new BCS-superconductor MgB₂ resistance. In most researches the high doses of irradiation (~ 5·10¹⁷  ≤ at ≤ ~ 5·10¹⁹ cm^-2) were used. Thus the number of displacements per atom (dpa) can reach about 10, and T_c goes down from ~ 38 K to ~ 5 K.

Obviously, at the small irradiation doses the probability of flowing processes of point defects recombination is relatively small; in addition, the probability of point defects' appearance in sublattices of Mg and B in the elementary cell of MgB₂ can appear different.  There is the potential possibility of studying the influence of disordering processes in different sublattices on MgB₂ properties in the normal and superconducting states.

We showed, that the intensities of the different diffraction lines are variously sensible to character of filling MgB₂ crystal lattice positions with the ions of Mg and B, and also with vacancies, that allows reliably to differentiate the features of crystal lattice imperfectness in the superconductor MgB₂. This circumstance opens prospects for the further study of two-gaps superconductivity nature.

On the initial stage of the irradiation (0 ≤ Φ·t ≤ ~ 5·10¹⁵ cm^-2) we observed strong growth of diffraction lines intensities relation (I₁₁₀/I₁₀₀) and reduction of T_c. The effect is connected with the formation of vacancies in Mg-sublattice.  The decrease of I₁₁₀/I₁₀₀  and T_c growth on the second stage of irradiation (~ 5·10¹⁵  ≤ Φ·t ≤ ~ 1·10¹⁶ cm^-2)  can be bounded only with the process of the vacancies appearance in B-sublattice. And, finally, weak growth of I₁₁₀/I₁₀₀ and insignificant decline of T_c on the third stage of irradiation (Φ·t ≥ ~ 1·10¹⁶ cm^-2) can be provided by pending process of the simultaneous defects formation in two sublattices of the superconductor MgB₂ elementary cell.

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