A wide band gap semiconductor, diamond has recently emerged as an important and promising material for a wide field of optoelectronic and electronic applications. In traditional CVD (Chemical Vapour Deposition) diamond synthesis on substrate, such as on silicon single crystal, hydrogen radicals were thought to be inevitable. In this work, we synthesized diamond particles of wide band gap semiconductor on substrate without flammable hydrogen gas.

      Through our work, safer and easier diamond synthesis was realized. We use graphite rods for heaters  - Joule heating -  and at the same time as  carbon sources. With this method, we can synthesize diamond particles without hydrogen. We refer to our   present technique as,  “hydrogen-free diamond synthesis”. 

      In argon (99.99%; 4N), high purity argon (6N), helium (4N5) or nitrogen (4N) atmosphere, without hydrogen gas, nano diamond particles were synthesized by the graphite rod heating method. One micrometer diameter particles in argon gas, 0.8 micrometer particles in high purity argon, 0.6 micrometer particles in helium, and 1 micrometer particles in nitrogen, were all confirmed as diamond by SEM micrographs and  Raman spectroscopy. 

We confirmed diamond particle morphological change with hydrogen content from high purity argon atmosphere up to pure hydrogen atmosphere. For  gaseous species identification, OES (Optical Emission Spectroscopy) results will also be reported in this presentation. 

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1. Characterization of the interface between nano crystalline diamond and Silicon substrate