Adsorption of biomolecules on self-organized nanostructured semiconductor surfaces

Katarzyna Skorupska 1James R. Smith 2Sheelagh A. Campbell 2Daren Mernagh 2Ferdinand Streicher 1Hans J. Lewerenz 1

1. Hahn-Meitner-Institute (HMI), Glienicker Str. 100, Berlin D-14109, Germany
2. University of Portsmouth, White Swan Road, Portsmouth PO12DT, United Kingdom


The layered semiconductor MoTe2 and step bunched silicon surfaces, obtained by electrochemical processing in alkaline solution under cathodic potential are used as substrate for specific adsorption of the protein reverse transcriptase. The experiment is monitored by imaging of the deposite/substrate surfaces using tapping mode atomic force microscope. The RT of the human immunodeficiency virus I was selected due to its medical relevance and its well-defined three-dimensional heterodimer structure that is homologous to the human right hand. In the past, n-MoTe2 was used as a substrate for the RT adsorption and STM imaging [1] because of its surface defects with negatively charged surface states. The step-bunched Si surfaces, exhibiting steps of about 10 atomic bilayers, is known to form an accumulation layer where the surface consists of a high density of negative charge, evidenced by synchrotron radiation photoelectron spectroscopy performed at BESSY [2,3]. Kelvin-Probe atomic force microscopy (AFM) shows an inhomogeneous lateral distribution of the electrostatic potential across the surface. This suggests that specific sites can act for electrostatic and van der Waals binding of the protein at the surface. First AFM data that show adsorption at step edges are presented. Besides protein immobilization, the charge transfer properties between biomolecule and semiconductor substrate are of considerable interest. Future studies will address this and the RT conformation and bonding between silicon and biomolecule.

[1] K. Skorupska, J.R. Smith ,S.A. Campbell, H. Jungblut, H.J. Lewerenz, STM Imaging of Proteins on Semiconducting Substrates, ECS Transactions 2 (2007) 63

[2] K. Skorupska, M. Lublow, M. Kanis, H. Jungblut, H. J. Lewerenz, Electrochemical preparation of a stable accumulation layer on Si: a Synchrotron radiation photoelectron spectroscopy study, Applied Physics Letters 87 (2005) 262101

[3] K. Skorupska, M. Lublow, M. Kanis, H. Jungblut, H. J. Lewerenz, On the Surface Chemistry of Silicon under Reducing Conditions: an SRPES Investigation, Electrochemistry Communications 7 (2005) 1077

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Presentation: Keynote lecture at SMCBS'2007 International Workshop, by Katarzyna Skorupska
See On-line Journal of SMCBS'2007 International Workshop

Submitted: 2007-10-16 13:03
Revised:   2009-06-07 00:48
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