By using atomic layer deposition from CrO₂Cl₂ and CH₃OH at 420 °C, chromia (eskolaite α-Cr₂O₃) was epitaxially grown on c- and r-cut sapphire. Also, the material was grown in the polycrystalline form on fused silica. Micro-Raman spectra of the films excited with 532 nm laser radiation were measured. Five Raman bands are expected in the spectrum of α-Cr₂O₃, including the most intensive one (A_1g) at about 550 cm^-1. We demonstrated that the position of the latter band depended on the substrate: in the sapphire case the band was greatly blue shifted with respect to its position in the silica case. The shift was used for the evaluation of the strain in the epitaxial chromia. The evaluation gave a hydrostatic equivalent stress of 5.9 GPa for the thinnest (about 4 nm) film on c-cut sapphire. With the thickness increase up to 210 nm, the stress in the films decreased down to 1.9 GPa. The compressive stress was observed also in the films grown on r-cut sapphire.

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