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ALD of High-k Dielectrics and Metals

Roy G. Gordon 

Harvard University, 12 Oxford Street, Cambridge, MA 02138, United States

Abstract

Selection of an appropriate precursor is a critical first step in developing ALD processes. Many precursor properties are required: sufficient vapor pressure at a temperature at which decomposition is negligible, self-limiting deposition reactions that produce a pure product at a high enough rate on suitable substrates, a synthesis procedure that produces a sufficiently pure precursor at a cost that is low enough for applications, and long shelf life. Several other precursor properties are desirable: low melting points (preferably below room temperature), low toxicity, and non-corrosive precursors and reaction byproducts.

Case studies of precursor design will be discussed: ALD of high-k dielectrics (hafnium oxide, zirconium oxide and multicomponent lanthanide oxides), and ALD and CVD of transition metals (iron, cobalt, nickel, copper and ruthenium) and their nitrides and oxides. The connections between precursor structures and the desired properties will be emphasized.
 

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Presentation: Invited at E-MRS Fall Meeting 2007, Symposium C, by Roy G. Gordon
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-06-19 17:26
Revised:   2009-06-07 00:44