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High Temperature Electronics Packaging

Wayne Johnson 

Auburn University, 162 Broun Hall/ECE Dept, Auburn 36849, United States

Abstract

Materials and processes are being developed for packaging of low and medium power, high temperature electronics (up to 500o). Ceramic (Al2O3 and AlN) hermetic packages are being used. Die attach techniques based on Au bump thermocompression, Au-Si and off-eutectic Au-Sn have been demonstrated. Au thermosonic wire bonding provides a monometallic interconnect system between the die and the package pads. Both metallized ceramic and metal lids were vacuum solder sealed with off-eutectic Au-Sn. The sealing process had to be optimized to prevent growth of Ni-Sn-Au crystals during the liquidus phase of the sealing process. Assembly process details and initial characterizations results are presented.

 

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Presentation: Invited oral at HITEN 2007, by Wayne Johnson
See On-line Journal of HITEN 2007

Submitted: 2007-06-10 20:19
Revised:   2009-06-07 00:44