Chemical deposition from solution (CD) offers a simple and cost-effective route for the fabrication of high quality semiconductor thin films, and is useful for the deposition of a large variety of semiconductors. Lead selenide and lead sulfide semiconductor films deposited using CD can be obtained in a wide range of morphologies, from nanocrystalline films, through microcrystalline films with columnar grains, to epitaxial monocrystalline films. This is achieved by effectively controlling the active deposition mechanism during growth: The cluster mechanism, in which clusters of the semiconductor material are formed in solution and migrate onto a solid support to form a film, or the ion-by-ion mechanism, in which the reaction occurs (and the film forms) directly on the substrate surface. Strategies for improving the material quality and for controlling orientation of the films will be discussed. In addition to conventional in-house characterization techniques, we will highlight in-situ techniques such as laser light scattering and synchrotron grazing incidence x-ray diffraction for monitoring film growth and morphology evolution in real time.

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