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Thin NiO films grown by atomic layer deposition using cyclopentadienyl-type of precursors and ozone

Hong-Liang Lu Sabina Spiga Claudia Wiemer Michele Perego Giovanna Scarel Marco Fanciulli 1

1. MDM National Laboratory CNR-INFM (MDM), Via Olivetti 2, Agrate Brianza 20041, Italy

Abstract

We discuss the effects of growth temperature (Tg) on the structural and chemical properties of thin NiO films deposited by atomic layer deposition (ALD). Thin NiO films were grown on Si(100) using Ni(Cp)2 (Cp=cyclopentadienyl, C5H5) or Ni(EtCp)2 [EtCp=ethylcyclopentadienyl, (C2H5)C5H4)] and ozone as precursors in the 150-300 oC temperature range. Neither Ni(Cp)2 nor Ni(EtCp)2 combined with water as oxygen source generates any film. The prepared films were characterized using X-ray reflectivity (XRR), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and time of flight-secondary ion mass spectroscopy (ToF-SIMS). The behavior of films deposited using Ni(Cp)2 and Ni(EtCp)2 has been compared and discussed. NiO films with good composition are obtained at Tg = 250 oC or above. At a fixed Tg, the growth rate for NiO films deposited using Ni(Cp)2 is higher than for those deposited using Ni(EtCp)2. The electronic density of NiO films deposited at 300 oC is close to the one of bulk NiO. According to XRD and FTIR, films deposited at Tg ≥ 200 oC have a cubic polycrystalline structure. Impurities in NiO films decrease with increasing Tg, as detected by ToF-SIMS. Based on the structural and chemical properties, we selected Ni(Cp)2 to grow NiO films on metal substrates. Metal-NiO-metal devices were fabricated to explore the resistive switching properties of this material.

 

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Presentation: Oral at E-MRS Fall Meeting 2007, Symposium C, by Hong-Liang Lu
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 13:07
Revised:   2009-06-07 00:44