Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers

Wojciech Maziarz 1Andrij P. Vlasov 2Oleksandr Y. Bonchyk 3Stepan Kiyak 3Igor M. Fodchuk 4Ruslan M. Zaplitnyy 4Taras Kazemyrskyy 4Adam Barcz 5Zbigniew Swiatek 1Pawel S. Zieba 1

1. Polish Academy of Sciences, Institute of Metallurgy and Materials Sciences (IMIM PAN), Reymonta 25, Kraków 30-059, Poland
2. Ivan Franko National University, 50 Dragomanov Str., Lviv, Ukraine
3. Institute of Applied Problems of Mechanics and Mathematics (IAPMM), 3B Naukova Str., Lviv 79060, Ukraine
4. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine
5. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


It has been presented the results of AFM, SEM, X-ray and SIMS studies of near-surface regions of HgCdTe graded-gap epitaxial layers obtained by high-temperature annealing of them in the vapour of the main components. We used grown on CdTe substrates the ISOVPE layers of HgCdTe whose surface was implanted by arsenic ions. The AFM investigation has showed that the morphology of surfaces of HgCdTe structures obtained at the same conditions is significantly influenced by the crystal orientation of the initial substrates of CdTe. By means of SIMS and SЕМ analysises it has been observed a substantial increase of the molar content of HgCdTe solid solution on the surface of ion-implanted epitaxial layers after high-temperature annealing. For X-ray investigation we used the technique of two-crystal spectrometry at skew-asymmetrical setup of the sample under study. On the basis of the observed structural changes taking place at different angles of azimuth scanning it has been made comparison of the calculated profiles of deformations and the experimental SIMS distribution of the main components of HgCdTe solid solution in the near-surface regions of the structure. Large gradients of composition HgCdTe solid solution have been shown to be formed in the near-surface regions of the epitaxial layers due to small changes in the thermodynamically equilibrium conditions of the process of high-temperature annealing. These gradients are the cause of formation of graded-band-gap structure in which strains of lattice crystal are present. The influence of these factors on the diffusion of an electrically active impurity is analyzed.

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  2. Cu-Ti Base Multicomponent Amorphous and Silver Nanocrystalline Composites
  3. Microstructure and magnetic properties of two phase b+g ferromagnetic Co-Ni-Al alloys
  4. Structure of Si:Mn annealed under enhanced stress conditions
  5. Skew asymmetric arrangement of X-ray diffraction for structural diagnostics of multi-layer semiconductor materials
  6. Characterization and properties of a modified NiTi shape memory alloy by N+ ion implantation.
  7. Microstructure changes in two phase β+γ Co-Ni-Al ferromagnetic shape memory alloys in relation to Al/Co ratio
  8. Effect of high pressure annealing on defect structure of GaMnAs
  9. HRTEM and TEM studies of amorphous structures in ZrNiTiCu base alloys obtained by rapid solidification or ball milling
  10. Powder metallurgy technology of NiTi shape memory alloy
  11. Effect of stress on structural transformations in GaMnAs
  12. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  13. Structure and Magnetization of Defect-Associated Sites in Silicon
  14. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  15. The role of radiation defects in HgCdTe epitaxial growth
  16. Interface dynamics of melt instabilities on semiconductor surfaces
  17. Search for New Metallic Glass Compositions in NiZrTi Base Alloys Near Multicomponent Eutectic Positions
  18. Optical properties of p-type ZnO:(N, As, Sb)
  19. Diffusion of Mn in gallium arsenide.
  20. HgCdMnZnTe: growth and physical properties
  22. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  23. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  24. Structure and mechanical properties of ball milled TiAl-Cr intermetallics consolidated by hot pressing and pulse plasma sintering
  25. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  26. p-type conducting ZnO: fabrication and characterisation
  27. Study of Long-Term Stability of Ohmic Contacts to GaN
  28. X-Ray diffraction studies of radiation defects in CdTe single crystals and epitaxial layers
  29. Nanocrystalline TiAl-V intermetallics hot pressed from mechanically alloyed powders
  30. Luminescent properties of wide bandgap materials at room temperature

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Wojciech Maziarz
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 12:09
Revised:   2009-06-07 00:44
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine