The MOVPE grown InGaP layers are often used in device structures, like heterojunction bipolar transistors, high electron mobility transistors, solar cells, light-emitting and laser diodes. Typical for this ternary prepared by MOVPE or MBE is that the group III atoms are not arranged randomly but they tend to create an ordered CuPt-B type structure. The extent of group III atoms rearrangement is significantly influenced by the growth conditions and layers with various degree of order are usually prepared. Ordering lowers the crystal symmetry what leads to anisotropic behaviour of material parameters.
Parameters of complete device structures, particularly of those where the carrier transport proceeds parallel to substrate-structure interface, are significantly influenced by transport properties in InGaP layer. Anisotropy of device parameters was reported e.g. for laser diodes, but it is expected to occur also in HEMTs.
Very little was reported on transport properties in epitaxial InGaP layers. We have investigated this problem in detail and we found that ordered layers exhibit resistivity anisotropy in [011] and [0-11] crystallographic directions. Moreover, we found the strong influence of misfit strain in mismatched layers on transport parameters, which is demonstrated e.g. by enhancement of mobility in slightly mismatched layers. In our contribution we will report on results from evaluation of electrical properties using temperature dependent Hall measurements on square samples (van der Pauw method) in confrontation with results from temperature dependent magnetoresistance measurements on stripe 4-point probes.

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