The Zn doping of AlGaAs/GaAs QW heterostructures for laser diodes during MOCVD growth was examined. Fast diffusion of this dopant result in problems of sharp concentration profiles attainment. Experimental concentration profiles of heterostructures were analyzed to obtain more specific information because of wide scattering of published Zn diffusivity data. Electrochemical profiling was used to determine the electrically active Zn concentration and diffusion depth. Effective Zn diffusivity ~ 6 10-14 cm²/s for used epitaxial growth temperature 770C was estimated. Numerical simulation of Zn profiles for different growth conditions was carried out using this value. Calculation model provided for controllable variation of assigned doping profile ("profile doping") and considering the growth surface movement was employed. Results of simulation allowed to optimize doping regimes and achieve well-controlled p-n junction depths.

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1. Indium segregation effects in InGaAs/GaAs multiple QW heterostructures grown by MOCVD