17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 14th, Wednesday

14:00 00:30:00 Invited oral Robert Dwilinski Ammonothermal growth of GaN substrates
14:30 00:30:00 Invited oral Yusuke Mori Fabrication of bulk GaN crystals by Na flux method with a necking technique and a coalescence growth
14:45 00:15:00 Oral Takahiro Kawamura First-principles calculation of the carbon-added Na-flux GaN growth on GaN(0001)
15:00 00:15:00 Oral Boris Epelbaum Processes of dissociative evaporation involved into sublimation growth of bulk AlN crystals
15:15 00:15:00 Oral Yoshihiro Kangawa Influence of growth orientation on microstructure of AlN grown by solid-source solution growth (3SG) method
15:30 00:15:00 Oral Rajappan Radhakrishnan Sumathi Achievement and advancement in the hetero-epitaxial growth of AlN single crystals on SiC substrates by PVT approach

August 15th, Thursday

10:20 00:30:00 Invited oral Grzegorz Łuka Zinc oxide films grown by atomic layer deposition: from material properties to device applications
10:50 00:15:00 Oral Mengde Ren Hydrothermal growth  of bulk ZnO:Ga crystals and their physical properties
11:05 00:15:00 Oral Łukasz Wachnicki Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
11:20 00:15:00 Oral Bartłomiej S. Witkowski Hydrothermal growth of ZnO nanorods for solar cells applications
11:35 00:15:00 Oral Norihiro Suzuki Growth of corundum-structured α-(InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers
11:50 00:15:00 Oral Joan J. Carvajal Nanoporous GaN epitaxial layers grown by Chemical Vapor Deposition
12:05 00:15:00 Oral Shigeya Naritsuka c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure
14:00 00:30:00 Invited oral Lutz Geelhaar Nucleation and growth of GaN nanowires by molecular beam epitaxy
14:30 00:15:00 Oral Marta Sobanska Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
14:45 00:15:00 Oral Marcin Sarzynski GaN substrates with variable surface miscut for laser diode applications
15:00 00:15:00 Oral Valentin N. Jmerik Plasma-assisted molecular beam epitaxy of AlGaN-based quantum well structures demonstrating spontaneous and stimulated emission in mid-ultraviolet spectral range
15:15 00:15:00 Oral Ferdinand Scholz Semipolar GaInN-GaN hetero structures on large area substrates
15:30 00:15:00 Oral JunShuai Xue Pulsed metal organic chemical vapor deposition growth, fabrication, and characterization of nearly lattice-matched InAlN/GaN high electron mobility transistors on sapphire substrate
15:45 00:15:00 Oral Pawel Strak Absorption and emission spectra of InN/GaN superlattice structures by DFT methods
16:30 00:30:00 Invited oral Jawad Ul Hassan Advance in Epitaxial Growth of SiC for High Power Devices
17:00 00:15:00 Oral Christian Ehlers HCl assisted growth of thick 4H-SiC epilayers by chemical vapour deposition
17:15 00:15:00 Oral Keiko Masumoto Suppression of step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle
17:30 00:15:00 Oral Johji Nishio C-face epitaxial growth of 4H-SiC on quasi-150mm-diameter wafers
17:45 00:15:00 Oral Koichi Kakimoto Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory
18:00 00:15:00 Oral Takeshi Mitani Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C based solutions under various temperature gradient conditions
18:15 00:15:00 Oral Kazuaki Seki Growth of high quality 3C-SiC on hexagonal SiC seed using TSSG method
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