17th International Conference on Crystal Growth and Epitaxy...

 on-line journal

Presenting person

August 15th, Thursday

14:00 00:30:00 Invited oral Michael Heuken Next generation production MOVPE - on the role of in-situ metrology for process control and yield enhancement
14:30 00:30:00 Invited oral Markus Pristovsek Growth monitoring of nitride semiconductors at its limit
15:00 00:15:00 Oral Motoaki Iwaya In situ X-ray diffraction monitoring of GaInN growth by metalorganic vapor phase epitaxy
15:15 00:15:00 Oral Guangxu Ju Continuous in situ X-ray reflectivity measurement on InGaN epitaxial growth by MOVPE
16:30 00:30:00 Invited oral Kiyoshi Kanisawa Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system
17:00 00:30:00 Invited oral Masamitu Takahasi In-situ monitoring of molecular-beam epitaxial growth of zero-, one-, and  two-dimensional structures using synchrotron X-ray diffraction
17:30 00:15:00 Oral Takashi Toujyou 3-dimensional InAs island growth on GaAs(001) at 500 oC observed by STMBE system
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