Time
|
Duration
|
Type
|
Presenting person
|
Title
|
September 7th, Tuesday |
|
| 14:00 |
Tuesday afternoon - Jean-Yves Duboz - Main Building, room 206 |
| 14:00 |
00:45:00 |
invited oral |
Marie-Antoinette di Forte-Poisson |
MOCVD growth of Group III Nitrides for high power, high frequency applications. |
| 14:45 |
00:45:00 |
invited oral |
Thomas Zettler |
Optical in-situ monitoring of III-Nitride epitaxial growth |
| 15:30 |
Coffee break |
| 15:50 |
Afternoon session - continued - Jean-Yves Duboz |
| 16:00 |
00:20:00 |
oral |
M. B. Charles |
Methods of Stress Reduction in the MOCVD Epitaxial Growth of GaN on Silicon |
| 16:20 |
00:20:00 |
oral |
Anelia Kakanakova |
Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system |
| 16:40 |
00:20:00 |
oral |
Gowtham Manoharan |
A New Single layer antireflection coating on PET substrates for the Display applications |
September 8th, Wednesday |
|
| 09:00 |
Wednesday morning - Fernando Calle - Main Building, room 206 |
| 09:00 |
00:45:00 |
invited oral |
Jean-Yves Duboz |
solar blind detectors based on AlGaN grown on sapphire |
| 09:45 |
00:45:00 |
invited oral |
Martin Eickhoff |
Properties and Applications of Group-III-Nitrides Solution-Gate Field-Effect Transistors |
| 10:30 |
Coffee break |
| 11:00 |
Morning session - continued - Fernando Calle - Main Building, room 206 |
| 11:00 |
00:20:00 |
oral |
Wlodek Strupinski |
Electrical Properties of GaN/AlGaN Hetrostructures |
| 11:20 |
00:20:00 |
oral |
Grzegorz Jurczak |
Modeling of elastic, piezoelectric and optical properties of vertically correlated GaN/AlN quantum dots |
| 11:40 |
00:20:00 |
oral |
Bojan Karunagaran |
Low Temperature Deposition of Silicon Nitride Layers by Plasma Enhanced CVD For Large Area High Efficiency MC-Si Solar Cells |
| 12:30 |
Lunch break |
| 14:00 |
Wednesday afternoon - Marie-Antoinette di Forte-Poisson - Main Building, room 206 |
| 14:00 |
00:45:00 |
invited oral |
Juergen H. Christen |
Cathodoluminescence Microscopy of Nitrides |
| 14:45 |
00:45:00 |
invited oral |
Fernando Calle |
Nitride-based Surface Acoustic Waves Devices and Applications |
| 15:30 |
Coffee break |
| 15:50 |
Afternoon session - continued - Marie-Antoinette di Forte-Poisson - Main Building, room 206 |
| 16:00 |
00:20:00 |
oral |
Wojtek J. Walecki |
Novel Noncontact Thickness Metrology for Backend Manufacturing of Wide Bandgap Light Emitting Devices |
| 16:20 |
00:20:00 |
oral |
Lech Dobrzanski |
The p-i-n photo detectors for UVA and UVB regions made of GaN/AlGaN |
| 16:40 |
00:20:00 |
oral |
Akihiko Kikuchi |
Room temperature stimulated emission from self-organized GaN nano-columns grown on (111) Si substrate |
| 17:00 |
00:20:00 |
oral |
Thomas Wolff |
Electrochemical Etching and CV-Profiling of GaN |
| 18:00 |
Posters session |
| 18:00 |
#C-01 |
poster |
Asghar Asgari Tokaldani |
Theoretical model of transport characteristics of AlGaN/GaN High electron mobility transistors |
| 18:00 |
#C-02 |
poster |
Hong-Ying Chen |
Argon ion beam voltages influence the changes of microstructure and chemical composition of aluminum nitride films in dual ion beam sputtering system |
| 18:00 |
#C-03 |
poster |
Vitalij G. Deibuk |
Charge transfer and thermodynamic stability of ternary nitride solid solutions |
| 18:00 |
#C-05 |
poster |
Janusz Karpinski |
Al_xGa_{1-x}N bulk single crystals: Temperature dependence of Al solubility |
| 18:00 |
#C-06 |
poster |
Marek Godlewski |
Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures |
| 18:00 |
#C-07 |
poster |
Min Gong |
Annealing Behaviors of Void-like Defects in SiO_2/SiC Probed by Slow-Positron-Beam |
| 18:00 |
#C-08 |
poster |
Lucja Gorczyca |
Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes. |
| 18:00 |
#C-09 |
poster |
Barbara Kalandyk |
Microstructure Strength Relationship in Microalloyed Cast Steels |
| 18:00 |
#C-10 |
poster |
Eliana Kaminska |
Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT |
| 18:00 |
#C-11 |
poster |
Eliana Kaminska |
TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN |
| 18:00 |
#C-12 |
poster |
Michal Kaminski |
GaN growth by Sublimation Sandwich Method |
| 18:00 |
#C-13 |
poster |
Krzysztof P. Korona |
Recombination Dynamics in GaN/AlGaN Low Dimensional Structures Obtained by SiH_4 Treatment |
| 18:00 |
#C-14 |
poster |
Iwona A. Kowalik |
Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study |
| 18:00 |
#C-15 |
poster |
Krzysztof Pakuła |
Spontaneous Superlattice Formation in MOCVD Growth of AlGaN |
| 18:00 |
#C-16 |
poster |
Yong Seob Park |
HARDNESS AND LUBRICATION PROPERTIES OF CN_X THIN FILMS GROWN BY CLOSE FIELD UNBALANCED MAGNETRON SPUTTERING |
| 18:00 |
#C-17 |
poster |
Matthieu PETIT |
Nitridation of InP(100) surfaces studied by synchrotron radiation |
| 18:00 |
#C-18 |
poster |
J. O. Schmitt |
Close-Spaced Crystal Growth and Characterization of BP Crystals |
| 18:00 |
#C-19 |
poster |
Tomasz Wojtowicz |
The atomic structure of defects formed during doping of GaN with rare earth ions |
| 18:00 |
#C-20 |
poster |
Tomasz Wojtowicz |
Transmission electron microscopy structural investigations of Tm implanted GaN |
| 18:00 |
#C-21 |
poster |
Thomas Wolff |
Automated Electrochemical CV-Profiling of semiconductor structures on wafer scale |
September 9th, Thursday |
|
| 09:00 |
Thursday morning - Jacek A. Majewski - Main Building, room 206 |
| 09:00 |
00:45:00 |
invited oral |
Shuji Nakamura |
GaN Crystal Growth and Light Emitting Devices |
| 09:45 |
00:45:00 |
invited oral |
Jacek Jasiński |
"Classic" and Novel Methods of Dislocation Reduction in Heteroepitaxial Nitride Layers |
| 10:30 |
Coffee break |
| 11:00 |
Morning session - Jacek A. Majewski - Main Building, room 206 |
| 11:00 |
00:20:00 |
oral |
Kestutis Jarasiunas |
Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN |
| 11:20 |
00:20:00 |
oral |
Barbara Chwalisz |
Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells |
| 11:40 |
00:20:00 |
oral |
Fabrizio R. Giorgetta |
Resonant tunneling and intersubband absorption in AlN-GaN-superlattices |
| 12:30 |
Lunch break |
| 14:00 |
Thursday afternoon - David C. Look - Main Building, room 206 |
| 14:00 |
00:45:00 |
invited oral |
Bo Monemar |
Characterisation of GaN grown by HVPE |
| 14:45 |
00:20:00 |
oral |
Aneta Drabińska |
Electroreflectance and photoreflectance studies of AlGaN/GaN heterostructure with a QW placed inside AlGaN layer |
| 15:05 |
00:20:00 |
oral |
Gijs Franssen |
Built-in electric fields in group III-nitride light emitting quantum structures |
| 15:30 |
Coffee break |
| 15:50 |
Afternnon session - continued - David C. Look - Main Building, room 206 |
| 16:00 |
00:20:00 |
oral |
Karolis Kazlauskas |
Monte Carlo simulation approach for a quantitative characterization of the band edge in InGaN quantum wells |
| 16:20 |
00:20:00 |
oral |
Pawel Trautman |
The fundamental absorption edge of high crystalline quality GaN and that of amorphous GaN grown at low temperature |
| 16:40 |
00:20:00 |
oral |
Marcin Sarzynski |
Bowing of epitaxial structures grown on bulk GaN substrates |
| 17:00 |
00:20:00 |
oral |
Maciej Wojdak |
Study of photo- and electro-luminescence related with Er^{3+} ions in GaN:Er |
September 10th, Friday |
|
| 09:00 |
Friday morning - Bo Monemar - Main Building, room 206 |
| 09:00 |
00:45:00 |
invited oral |
David C. Look |
Giant traps in GaN and SiC: nanopores and dislocations |
| 09:45 |
00:45:00 |
invited oral |
Jacek A. Majewski |
Nitrides for Spintronics - Magnetic Moments and Spin Lifetimes in Nitrides |
